Band alignment of type-I SnS2/Bi2Se3 and type-II SnS2/Bi2Te3 van der Waals heterostructures for highly enhanced photoelectric responses

نویسندگان

چکیده

Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance. Band alignment is crucial understanding the mechanism of charge carrier transportation and interface dynamics in heterostructures. Herein, we grew SnS2/Bi2X3 (X = Se, Te) van der Waals heterostructures by combining physical vapor deposition chemical deposition. The band alignment, measured high-resolution X-ray photoelectron spectroscopy, suggested successful design type-I SnS2/Bi2Se3 type-II SnS2/Bi2Te3 heterostructure greatly response photoelectrochemical-type photodetector. photocurrent densities heterostructure-based were more than one order magnitude higher those SnS2, Bi2Se3, Bi2Te3. properties can be explained as follows: (i) photoexcited electrons holes are effectively separated heterostructures; (ii) charge-transfer efficiency density at between electrolyte improved; (iii) formed expand light absorption range. performance was further enhanced efficient trapping upright SnS2. due to heterostructure/electrolyte interface. These results suggest that suitable developed high-performance photodetectors other devices.

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ژورنال

عنوان ژورنال: Science China. Materials

سال: 2021

ISSN: ['2095-8226', '2199-4501']

DOI: https://doi.org/10.1007/s40843-021-1820-y